Silicon Carbide (SiC)
Agency: | |
---|---|
Level of Government: | Federal |
Category: |
|
Opps ID: | NBD00159973723226027 |
Posted Date: | Oct 27, 2023 |
Due Date: | Nov 3, 2023 |
Source: | https://sam.gov/opp/56c61027b4... |
Procurement Technical Assistance Centers (PTACs) are an official government contracting resource for small businesses. Find your local PTAC (opens in new window) for free government expertise related to contract opportunities.
- Contract Opportunity Type: Sources Sought (Original)
- All Dates/Times are: (UTC-04:00) EASTERN STANDARD TIME, NEW YORK, USA
- Original Published Date: Oct 27, 2023 12:10 pm EDT
- Original Response Date: Nov 03, 2023 12:00 pm EDT
- Inactive Policy: 15 days after response date
- Original Inactive Date: Nov 18, 2023
-
Initiative:
- None
- Original Set Aside:
- Product Service Code: 6810 - CHEMICALS
-
NAICS Code:
- 334413 - Semiconductor and Related Device Manufacturing
-
Place of Performance:
Adelphi , MD 20783USA
The Quantum Science and Technology Branch at the Army Research Laboratory (ARL) requires a quantity of 20 Silicon Carbide (SiC) substrates for growth of Silicon Carbide devices. Specifically, the 20 Silicon Carbide substrates will be used for optoelectronics, and technology development. The contractor shall provide 20 Silicon Carbide substrates that includes the following minimum specifications of the Government:
- The waver shall be 150 millimeters (mm) diameter silicon carbide (SiC) wafers
- The wafer shall be 47.5 mm flat
- The wafer shall be 350 micrometers plus or minus (+/-) 50 micrometers thick.
- Shall have a four (4) degrees (°) off-cut
- Shall be nitrogen doped (N+)
- Shall be double-side polished
- Silicon (Si-face Epi-Ready), Epi-Ready the surface is in a condition such the monocrystalline Epi layer can be successfully grown on it. The surface roughness is in the order of 1 nanometer (nm) and the surface is free of dust particles and metal contamination.
- The wafer shall be 4H-polytype
-
Basal Plane Dislocation (BPD) densities below 3000 per square centimeter (
- Shall have Threading Edge Dislocations (TED) below 3000 per square centimeter for epitaxial growth of 4H-SiC
- Total usable surface area of the wafer- Quantitative by automated optical surface inspection and 2mm x 2mm site map greater than (>) 90 percent (%).
Delivery address:
US ARMY RESEARCH LABORATORY
SHIPPING & RECEIVING
ATTN BRENDA VANMIL
2800 POWDER MILL RD
ADELPHI MD 20783-1138
301-394-0979
Delivery should be no later than three months after the award.
- KO BLDG 102 AMSSB ACC 2800 POWDER MILL RD
- ADELPHI , MD 20783-1197
- USA
- David Erb
- david.j.erb4.civ@army.mil
- Phone Number 3013942895
- Ashley Eaker
- ashley.e.eaker2.civ@army.mil
- Phone Number 3013944229
- Oct 27, 2023 12:10 pm EDTSources Sought (Original)
TRY FOR FREE
Not a USAOPPS Member Yet?
Get unlimited access to thousands of active local, state and federal government bids and awards in All 50 States.